Plasma processing apparatus, electrode unit, feeder member and radio frequency feeder rod

ABSTRACT

Disclosed herein is a plasma processing apparatus that introduces a process gas into an airtight processing container, that applies a radio frequency power to generate plasma, and that conducts a plasma process to an object to be processed arranged in the processing container. The plasma processing apparatus includes: an electrode unit arranged in the processing container, the electrode unit having an electrode for applying the radio frequency power, and a space portion arranged in the electrode unit, the space portion insulating the electrode and the processing container from each other. The space portion communicates with atmospheric air outside the processing container.

FIELD OF THE INVENTION

The present invention relates to a plasma processing apparatus wherein aradio frequency power is applied to an electrode in a processingcontainer to conduct a plasma process, and to an electrode unit.

DESCRIPTION OF THE RELATED ART

In a plasma process conducted in a manufacturing process of asemiconductor device or a manufacturing process of a liquid crystaldisplay, a process gas is introduced into an airtight processingcontainer in which an electrode is provided, a radio frequency power isapplied to the electrode, and the process gas is made into plasma. Bymeans of the plasma, a predetermined process such as an etching processor a film-forming process is conducted to a surface of an object to beprocessed.

In the plasma processing apparatus that carries out the process, forexample at a lower portion of the processing container, an electrodeunit is arranged, which also serves as a table for the object to beprocessed. At an upper portion of the electrode unit, a placing part onwhich the object to be processed is placed and an electrode part towhich the radio frequency power is applied are arranged. A base plateprovided at a lower portion of the electrode unit is grounded and formsa counter electrode to the electrode part. Thus, it is necessary toarrange an insulating member of a high dielectric strength between theelectrode part and the base plate in order to insulate them from eachother.

FIG. 8 is a schematic sectional view of a conventional electrode unit10. As shown in FIG. 8, the electrode unit 10 comprises: an electrodepart 12 to which a radio frequency power is supplied; a wafer-placingpart 16 onto which a semiconductor wafer as an object to be processed isplaced via a electrostatic chuck 15; a focus ring 14 provided around theplacing part 16, a based plate 30, and the like.

A feeder unit that supplies the radio frequency power to the electrodepart 12 is provided to penetrate the base plate 30 from a lower portionthereof. The feeder unit has an RF feeder rod 22 that is connected tothe electrode part 12 to impress the radio frequency power, and anoutside tube 20 that is grounded.

Between the electrode part 12 and the base plate 30, for the purpose ofinsulation, an insulating member 24 that consists of for example quartzor ceramics is provided.

SUMMARY OF THE INVENTION

However, the quartz or the ceramics for forming the insulating member 24is generally large, expensive and difficult to process. Thus,manufacture or replacement of the insulating member 24 has a costproblem. In addition, when the insulating member 24 is replaced, thefocus ring 14 above it or the like has to be removed, too. In addition,although the insulating member 24 insulates the electrode part 12 andthe base plate 30 from each other, the insulating effect may not beenough, so that a part of the radio frequency power applied to theelectrode part 12 may flow to the base plate 30 through the insulatingmember 24.

This invention is developed by focusing the aforementioned problems ofthe conventional plasma processing apparatus and the conventionalelectrode unit. An object of the present invention is to provide anelectrode unit that can sufficiently restrain loss of a radio frequencypower at low cost, and to provide a plasma processing apparatusincluding the electrode unit.

The present invention is a plasma processing apparatus that introduces aprocess gas into an airtight processing container, that applies a radiofrequency power to generate plasma, and that conducts a plasma processto an object to be processed arranged in the processing container, theplasma processing apparatus comprising: an electrode unit arranged inthe processing container, the electrode unit having an electrode forapplying the radio frequency power; and a space portion arranged in theelectrode unit, the space portion insulating the electrode and theprocessing container from each other; wherein the space portion iscommunicated with an atmospheric air outside the processing container.

Alternatively, the present invention is an electrode unit arranged in anairtight processing container of a plasma processing apparatus, theplasma processing apparatus introducing a process gas into theprocessing container and applying a radio frequency power to conduct aplasma process to an object to be processed, the electrode unitcomprising: an electrode to which the radio frequency power isimpressed; and a space portion that insulates the electrode and theprocessing container from each other; wherein the space portion iscommunicated with an atmospheric air outside the processing container.

According to the present invention, since the space portion that is anair layer is provided between the electrode and the processing containerinstead of quartz or ceramics used as a conventional insulating member,energy loss of, the radio frequency power can be restrained.

In addition, as an insulating member, it is unnecessary to use quartz,ceramics and the like that are large in size and difficult to process.Thus, the cost for manufacture and replacement of the insulating memberbecomes unnecessary, and a lightweight electrode unit and plasmaprocessing apparatus with high insulation properties can be provided.

In addition, since the space portion in the electrode unit iscommunicated with the atmospheric air outside the processing container,heat that stays at the space portion may be discharged outside theprocessing container at least by means of natural convection. Inaddition, the pressure in the space portion becomes substantially thesame as the atmospheric air outside the processing container, so thatabnormal electric discharge in the space portion is prevented.

Herein, it is preferable that an oxide layer is formed on a surface ofthe electrode at least on the side of the space portion. Alternatively,it is preferable that an oxide layer is formed on a surface of theprocessing container at least on the side of the space portion.

In addition, preferably, the plasma processing apparatus furthercomprises a feeder unit projected from an outside surface of theprocessing container, the feeder unit supplying the radio frequencypower to the electrode of the electrode unit, the feeder unit has animpressing member for impressing the radio frequency power and a groundmember surrounding the impressing member, the impressing member beingconnected to the electrode, the ground member being electricallyconnected to the processing container, a hollow portion is formedbetween the impressing member and the ground member, and the hollowportion is communicated to the space portion in the electrode unit. Inthe case, heat in the space portion of the electrode unit can beeffectively discharged.

More preferably, the feeder unit has a communication channel from thehollow portion in the feeder unit to the atmospheric air outside theprocessing container. In the case, heat in the hollow portion of thefeeder unit can be also effectively discharged. That is, in the case,the heat in the space portion of the electrode unit and in the hollowportion of the feeder unit can be discharged outside the processingcontainer by means of natural convection through the communicationchannel of the space portion, the space portion of the electrode unit,the hollow portion of the feeder unit and the communication channel ofthe feeder unit. Thus, the inside of the feeder unit, at which heattends to stay, can be effectively cooled.

For example, the ground member may be connected to a matching unit, andthe communication channel may be provided in a vicinity of a connectionpart of the matching unit and the ground member.

In addition, a cooling-medium circulating unit that circulates a coolingmedium through the electrode of the electrode unit to cool it may beprovided. If the cooling-medium circulating unit for cooling theelectrode part is provided, dew formation tends to be caused on asurface of an impressing member in the space portion of the electrodeunit or a surface of the processing container. However, the dewformation may be prevented if the natural convention is generated in thespace portion of the electrode unit and in the hollow portion of thefeeder unit for discharging the heat outside the processing container.

In addition, an air circulating unit that circulates the atmospheric airoutside the processing container through the space portion of theelectrode unit and the hollow portion of the feeder unit may beprovided. Thus, the effect of cooling the inside of the feeder unit andthe effect of preventing the dew formation in the space portion of theelectrode unit or the like can be enhanced more.

In addition, an object of the present invention is to provide a nobleand improved plasma processing apparatus and feeder member thereofwherein a radio frequency power is efficiently transferred and whereinheat transfer can be stopped.

The present invention is a feeder member arranged in a plasma processingapparatus; the plasma processing apparatus introducing a process gasinto an airtight processing container, applying a radio frequency powerto generate plasma of the process gas, and conducting a plasma processto an object to be processed; the feeder member electrically connectinga radio frequency power source that generates the radio frequency powerand an electrode to which the radio frequency power is impressed; thefeeder member comprising a first member made of a conductive material,and a second member interposed in the first member and made of adielectric material.

According to the invention, the first member made of a conductivematerial is directly connected to the radio frequency power source andthe electrode, and the second member made of a dielectric material,whose thermal conductivity is low, is interposed in the first member, sothat the electric power can be efficiently transferred and the heattransfer can be stopped.

Preferably, the second member is interposed in the first member as alayer.

In addition, preferably, the second member is made of any of aluminaceramics, bulk yttria or zirconia.

In addition, the present invention is a plasma processing apparatus thatintroduces a process gas into an airtight processing container, thatapplies a radio frequency power to generate plasma of the process gasand that conducts a plasma process to an object to be processed, whereina feeder unit having the above features is provided.

In addition, an object of the present invention is to provide a radiofrequency feeder rod that can prevent a heated state thereof byenhancing cooling efficiency thereof.

The present invention is a radio frequency feeder rod that is used forsupplying a radio frequency power and that has a flow path ofcooling-medium therein, the radio frequency feeder rod comprising anexpanding unit that expands an area of absorption of heat by the coolingmedium.

Alternatively, the present invention is a radio frequency feeder rodthat is used for supplying a radio frequency power to an electrode whena plasma process is conducted to an object to be processed and that hasa flow path of cooling-medium therein, the radio frequency feeder rodcomprising an expanding unit that expands an area of absorption of heatby the cooling medium.

For example, the expanding unit may consist of a plurality of flow pathsthat extend in parallel. Alternatively, the expanding unit may comprisea plurality of protrusions that protrude into the flow path ofcooling-medium. In the case, for example, the protrusion may be finlikeformed in an axial direction.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic sectional view of a plasma etching apparatusaccording to an embodiment of the present invention;

FIG. 2 is a schematic sectional view of a feeder unit of FIG. 1 and thevicinity thereof;

FIG. 3 is a schematic sectional view of a plasma etching apparatusaccording to another embodiment of the present invention;

FIG. 4 is a schematic sectional view showing a feeder member of FIG. 3;

FIG. 5 is a schematic sectional view showing another embodiment of afeeder member;

FIG. 6 is a sectional view showing a radio frequency feeder rodaccording to an embodiment of the present invention;

FIG. 7 is a sectional view showing another embodiment of a radiofrequency feeder rod; and

FIG. 8 is a schematic sectional view of a conventional electrode unit.

DESCRIPTION OF THE PREFERRED EMBODIMENT

Hereinafter, preferred embodiments of a plasma processing apparatusaccording to the present invention will be described in detail withreference to the attached drawings. In the specification and thedrawings, elements that have substantially the same structure andfunction are represented by the same numeral sign, and overlappedexplanation is omitted.

FIG. 1 is a schematic sectional view of a plasma etching apparatus 100of the embodiment. FIG. 2 is a partial sectional view of the plasmaetching apparatus 100. As shown in FIG. 1, the plasma etching apparatus100 includes an airtight processing container 102, which is for examplesubstantially cylindrical and grounded. At a lower portion in theprocessing container 102, a lower electrode unit 104 as an example of anelectrode unit is provided. The lower electrode unit 104 also serves asa table on which a semiconductor wafer W is placed.

Between the semiconductor wafer W and the lower electrode unit 104, aheat-transfer gas (for example, an He gas) is adapted to be supplied ata predetermined pressure from a heat-transfer-gas supplying mechanism(not shown). Thus, heat of the lower electrode unit 104 can betransferred to the semiconductor wafer W, so that the temperature of thesemiconductor wafer W can be suitably controlled.

An upper electrode plate 108 is provided at an upper portion of theprocessing container 102 to confront the lower electrode unit 104. Theupper electrode plate 108 is grounded via the processing container 102.A plurality of gas-ejecting ports 109 is provided at the electrode plate108.

A gas introducing port 106 connected to a gas-introducing system (notshown) is provided at an upper portion of the processing container 102.The process gas introduced from the gas introducing port 106 isintroduced into the processing container 12 through the gas-ejectingports 109 of the upper electrode plate 108. As a process gas, forexample, a C₄F₆ gas, a mixed gas of an Ar gas and an O₂ gas, and thelike may be used.

An opening 102 a is provided at the processing container 102 forconveying the semiconductor wafer W into or out from the processingcontainer 102. A gate valve 102 b that can hermetically open and closeis provided outside the opening 102 a. Through the gate valve 102 b, thesemiconductor wafer W is conveyed into or out from the processingcontainer 102, for example by means of a conveying unit of a load-lockchamber not shown.

An exhaust pipe 110 connected to an exhaust unit 112 is communicated toa lower portion of the processing container 102. A plasma process space118 in the processing container 102 can be maintained at a predeterminedvacuum level by vacuuming the plasma process space 118 via the exhaustpipe 110 by means of the exhaust unit 112. Magnets may be providedoutside the both side walls of the processing container 102 so as togenerate a magnetic field perpendicular to an electric field generatedin the processing container 102. In the case, it is preferable that thestrength of the magnetic field by the magnets is changeable.

The lower electrode unit 104 is connected to a radio frequency powersource 116 via a matching unit (matching box) 114. The frequency of theradio frequency power source 116 is for example 13.56 MHz. The frequencymay be not less than 100 MHz. By means of the electric power given bythe radio frequency power source 116, the process gas introduced intothe plasma process space 118 is made plasma, so that an etching processis conducted to the semiconductor wafer W.

Herein, an operation of conducting an etching process by using theplasma etching apparatus 100 is explained. At first, a semiconductorwafer W is placed onto the lower electrode unit 104 in the processingcontainer 102. Then, via the exhaust pipe 110, the inside of theprocessing container 102 is exhausted to a predetermined vacuum level orless by the exhaust unit 112. After that, a predetermined process gas isintroduced at a predetermined flow rate from the gas-introducing port106 into the processing container 102 via the gas-ejecting ports 109, sothat the inside of the processing container 102 is adjusted to apredetermined vacuum level.

Then, a radio frequency power of for example 13.56 MHz is applied fromthe radio frequency power source 116 to the lower electrode unit 104 viathe matching unit 114. Thus, the process gas is made plasma in theplasma process space (first space portion) 118, so that a predeterminedetching process is conducted to a surface of the semiconductor wafer W.

Next, a detailed structure of the lower electrode unit 104 of theembodiment is explained with reference to FIGS. 1 and 2. As shown inFIG. 1, the lower electrode unit 104 comprises; a placing part 144 ontowhich the semiconductor wafer W is placed via a electrostatic chuck 142,and an electrode part 146 that supports a lower portion of the placingpart 144. The placing part 144 and the electrode part 146 form a lowerelectrode.

In addition, the lower electrode unit 104 comprises: a circular focusring 148 provided to surround the semiconductor wafer W, and a sideinsulating member 150 provided to surround the placing part 144 and theelectrode part 146.

The electrostatic chuck 142 is formed by interposing a conductive layer143 in an insulator consisting of ceramics, polyimide film, or the like.A direct-current voltage is adapted to be impressed to the conductivelayer 143 from a high-voltage direct-current source 130 provided outsidethe processing container 102 via a lead wire. When the direct-currentvoltage is applied from the high-voltage direct-current source 130 tothe conductive layer 143, the semiconductor wafer W is stuck to theelectrostatic chuck 142 by coulomb attraction.

The focus ring 148 is arranged above the placing part 144. The focusring 148 is made of for example silicon or quartz, and has a function ofcausing ions in the plasma to effectively go into the semiconductorwafer W. In addition, a step-portion formed at an inner upper surface ofthe focus ring 148 helps the semiconductor wafer W to be placed on apredetermined position.

The radio frequency power is applied from the radio frequency powersource 116 to the electrode part 146 via the matching unit 114. Sincethe electrode part 146 and the placing part 144 contact with each other,the radio frequency power applied to the electrode part 146 is suppliedto the placing part 144. The placing part 144 and the electrode part 146are made of aluminum or the like in common.

As described above, if the lower electrode is separately formed into theplacing part 144 and the electrode part 146, at a maintenance operation,only the placing part 144 can be replaced while a feeder rod forsupplying the radio frequency power to the electrode part 146 (describedbelow) continues to be connected. That is, at a maintenance operation,it is unnecessary to pull or insert the feeder rod, so that it is easyto conduct the maintenance operation. Of course, the lower electrode maybe integrally formed, instead of separately formed into the placing part144 and the electrode part 146.

A cooling room 147 such as a cooling jacket is formed in the electrodepart 146. By means of a cooling-medium circulating unit 132, a coolingmedium is introduced into the cooling room 147 through a cooling-mediumintroducing pipe and is discharged therefrom through a cooling-mediumdischarging pipe. That is, the cooling medium is circulated in thecooling room 147 by means of the cooling-medium circulating unit 132.

The side insulating member 150 is a member for securely insulating thelower electrode consisting of the placing part 144 and the electrodeportion 146 from a bottom portion of the processing container 102 thatis grounded. The side insulating member 150 is made of for examplequartz or the like. The side insulating member 150 supports the focusring 148, the placing part 144 and the electrode part 146. In addition,the side insulating member 150 also plays a role of forming a spaceportion (second space portion) 160, which is the feature of theinvention, between the electrode part 146 and the processing container102.

Specifically, the side insulating member 150 is attached onto the bottomportion of the processing container 102. A step-portion is formed on aninner side of the side insulating member 150. The inner diameter at alower portion with respect to the step-portion is smaller than the innerdiameter at an upper portion with respect to the step-portion. Inaddition, a lower end portion of the electrode part 146 is supported bythe step-portion. Thus, the space portion 160 is formed on the innerside of the lower portion of the side insulating member 150, and theplacing part 144 and the electrode portion 146 are insulated from theprocessing container 102. In addition, the space portion 160 is dividedfrom the plasma process space 118 in the processing container 102, inwhich the plasma process is conducted, by the side insulating member150.

In addition, a communication channel (first communication channel) 164that communicates with the space portion (second space portion) 160 andthe atmospheric air outside the processing container 102 is formed at abottom portion of the processing container 102. Thus, heat that stays atthe space portion 160 can be discharged outside the processing container102 through the communication channel 164, at least by means of naturalconvection.

Thus, as the space portion (second space portion) 160 that is an airlayer is provided between the processing container and the lowerelectrode consisting of the placing part 144 and the electrode part 146,instead of quartz and/or ceramics provided as a conventional insulatingmember, energy loss of the radio frequency power can be restrained. Inaddition, the cost for manufacture and replacement of the insulatingmember becomes unnecessary, so that the electrode unit and the plasmaprocessing apparatus can be provided at a low cost.

Especially, since a dielectric constant of the atmospheric air (about 1)is lower than that of any low dielectric material, the above structureis optimal to prevent the loss of the radio frequency power. That is,the effect of communication of the space portion (second space portion)160 with the atmospheric air is remarkable. On the other hand, thewithstand voltage of quartz, ceramics or the like is 10 to 50 kV/mm, butthat of the atmospheric air is 1 kV/mm, which is very small. However, ifthe thickness of the space portion 160 is designed so as not to cause aninsulation breakdown by taking into consideration that the voltagedifference applied to the space portion 160 is several kV, it ispossible to secure an enough withstand voltage. In addition, thecapacitance of the lower electrode unit 104 can be designed to be thesame as a case using an insulating member such as quartz, ceramics orthe like.

Herein, the feeder unit 120 for supplying the radio frequency power tothe electrode part 146 is explained. The feeder unit 120 is provided toproject from a bottom surface of the processing container 102. Thefeeder unit 120 comprises: an RF feeder rod 122 as an example of animpressing member that is connected to the electrode part 146 of thelower electrode to impress the radio frequency power, and an outsidetube 124 as an example of a grounding member that is provided tosurround the RF feeder rod 122.

One end of the RF feeder rod 122 penetrates the space portion 160 of thelower electrode unit 104 to be connected to the electrode part 146. Theother end of the RF feeder rod 122 is connected to the matching unit114. One end of the outside tube 124 is connected to an edge portion ofa hole formed at a bottom portion of the processing container 102, thatis, grounded. The other end of the outside tube 124 is connected to thematching unit 114. Thus, the RF feeder rod 122 and the outside tube 124are connected via the matching unit 114, so that an electrical loop isformed.

The RF feeder rod 122 and the outside tube 124 are made of alow-resistance conductive material, such as silver or copper, in orderto supply the radio frequency power efficiently. For example, if theyare made of copper, the surfaces thereof may be silver plated.

A hollow portion (third space portion) 142 is formed between the RFfeeder rod 122 and the outside tube 124. The hollow portion 162 iscommunicated with the space portion (second space portion) 160 of thelower electrode unit 104. In the vicinity of the connecting part of thehollow portion 162 and the matching unit 114, a communication channel(second communication channel) 166 is formed for communicating thehollow portion 162 with the atmospheric air outside the processingcontainer 102.

Then, when heat accumulates at the space portion 160 of the lowerelectrode unit 104 and at the hollow portion 162 of the feeder unit 120,the heat can be discharged outside the processing container 102 by meansof natural convection of the air through the communication channel 164of the space portion 160, the space portion 160 of the lower electrodeunit 104, the hollow portion 162 of the feeder unit 120, and thecommunication channel 166 of the feeder unit 120. Thus, the inside ofthe feeder unit 120, at which the heat tends to stay especially, can becooled. The air flow through the space portion 160 of the lowerelectrode unit 104 and the hollow portion 162 of the feeder unit 120 maybe opposite to that shown in FIG. 1.

In addition, the communication channel 166 may be provided by forming ahole in the outside tube 124. Alternatively, a hole that communicateswith the atmospheric air outside the processing container 102 may beprovided at the matching unit 114, and then the hole may be used as thecommunication channel 166.

In addition, as shown in FIG. 2, a gap may be provided at a connectingpart of the matching unit 114 and the outside tube 124, and then the gapmay be used as the communication channel 166. Specifically, a flangeportion 170 is provided at the other end of the outside tube 124 of thefeeder unit 120, and the flange portion 170 is engaged with the matchingunit 114 via an engaging unit 172 such as a screw or a bolt. At thattime, the engaging unit 172 is engaged with the matching unit 114 soloosely that a gap is formed between the flange portion 170 and thesurface of the matching unit 114. In the case, the gap serves as thecommunication channel 166 between the hollow portion 162 and theatmospheric air.

In addition, as shown in FIG. 2, an air circulating unit 174 may beprovided for forcibly generating air convection through thecommunication channel 164 of the processing container 102, the spaceportion 160 of the lower electrode unit 104, the hollow portion 162 ofthe feeder unit 120, and the communication channel 166. The aircirculating unit 174 may be formed by a pump that supplies an air intothe communication channel 164 or a pump that sucks an air. In thesecases, cooling effects in the space portion 160 of the lower electrodeunit 104 and in the hollow portion 162 of the feeder unit 120 can beimproved.

In addition, when the above cooling-medium circulating unit 132 thatcools the electrode part 146 of the lower electrode unit 104 isprovided, dew formation tends to be caused on a surface of the RF feederrod 122 in the space portion 160 of the lower electrode unit 104 and/ora surface of the processing container 102. Regarding this point,according to the embodiment, since the air convection is generatedthrough the communication channel 164 and the communication channel 166to the atmospheric air outside the processing container 102, the abovedew formation may be prevented. Thus, surface transfer of radiofrequency power, which may be caused by the dew formation on respectivesurfaces of elements in the space portion 160, can be prevented.

Especially, if the cooling medium of the cooling-medium circulating unit132 flows through the space portion 160 of the lower electrode unit 104and/or the hollow portion 162 of the feeder unit 120, the dew formationtends to be caused, so that the effect of preventing the dew formationby the above structure is important. In addition, the forcibleconvection by the air circulating unit 174 may improve more the effectof preventing the dew formation.

An oxide layer may be formed on the lower electrode, at least on theside of the space portion 160. In addition, an oxide layer may be formedon a bottom portion of the processing container 102, at least on theside of the space portion 160. For example, the oxide layer may beformed on the lower side of the electrode part 146. The oxide layer maybe a film formed by a film-forming process. Alternatively, the oxidelayer may be a film formed by an anodic oxidation of a surface of thelower electrode or a surface of the processing container.

In the above description, the preferred embodiment according to theinvention is explained with reference to the attached drawings. However,needless to say, this invention is not limited to the embodiment.

For example, a plasma processing apparatus is not limited to the plasmaetching apparatus explained in the embodiment. The invention can beapplied to various plasma processing apparatuses such as anotherparallel plate plasma processing apparatus, a helicon-wave plasmaapparatus, an inductively coupled plasma processing apparatus, or thelike.

Next, with reference to the attached drawings, a plasma processingapparatus and feeder member thereof according to the present inventionis explained in detail. In the specification and the drawings, elementsthat have substantially the same structure and function are representedby the same numeral sign, and overlapped explanation is omitted.

FIG. 3 is a schematic sectional view of a plasma etching apparatus 200as an example of a plasma processing apparatus, according to theembodiment. FIG. 4 is a schematic sectional view showing a feeder member250. FIG. 5 is a schematic sectional view showing another feeder member260.

As shown in FIG. 3, in the plasma etching apparatus 200, a semiconductorwafer W is arranged at a lower portion in an airtight and substantiallycylindrical processing container 202, which is grounded. A lowerelectrode 204 that also serves as a stage is provided for example in avertically movable manner. A bottom portion of the processing container202 and a bottom portion of the lower electrode 204 are hermeticallyconnected by a substantially cylindrical bellows 220. Thus, the insideof the processing container 202 is sealed.

An upper electrode 208 is provided to confront the lower electrode 204.The upper electrode 208 is grounded via the processing container 202. Inthe embodiment, a radio frequency power is applied only to the lowerelectrode 204. However, a radio frequency power may be applied to theupper electrode 208 as well.

A gas introducing port 206 connected to a gas-introducing system (notshown) is provided at an upper portion of the processing container 202.The process gas supplied from the gas introducing port 206 is introducedinto the processing container 202 through a plurality of gas-ejectingports 209 provided in the upper electrode 208.

An exhaust pipe 210 connected to a gas-discharging mechanism (not shown)is communicated to a lower portion of the processing container 202. Theinside of the processing container 202 can be maintained at apredetermined vacuum level by producing a vacuum via the exhaust pipe210. Magnets may be provided outside the both side walls of theprocessing container 202 so as to generate a magnetic fieldperpendicular to an electric field. In the case, it is preferable thatthe strength of the magnetic field by the magnets is changeable.

The lower electrode 204 is connected to a radio frequency power source214 via a feeder member 250 and a matching unit 212. The frequency ofthe radio frequency power source 214 is for example 13.56 MHz.

Herein, the feeder member 250 is explained, which is also called aconductive rod (Hot Return). As shown in FIG. 2, the feeder member 250having the feature of the present invention has three elements ofconductors 252 and 256 and an insulator 254. The conductors 252 and 256are made of a good conductive material whose electric resistance is low,such as aluminum, copper or the like, and has a substantiallycylindrical shape having a bottom area A. The insulator 254 is made of adielectric material whose thermal conductivity is low, and has asubstantially cylindrical shape having a thickness d and a bottom areaA. The conductors 252 and 256 and the insulator 254 may have a normalcylindrical shape, or a cylindrical shape including a plurality ofcylindrical cavities.

In order to reduce loss of the radio frequency power by electrostaticcoupling between the conductors 252 and 256, it is preferable that thecapacitance of the feeder member 250 is large. The capacitance of thefeeder member 250 is proportional to the dielectric constant and thebottom area A of the insulator 254, and inversely proportional to thethickness d. Thus, it is preferable that the dielectric constant and thebottom area A are as large as possible and that the thickness d is asthin as possible. The bottom area A is preferably as large as possiblewithin an allowable range in designing the plasma processing apparatus200, and the thickness d is preferably formed as thinly as possiblewithin a range wherein the insulator 254 can be processed.

In addition, in order to interrupt thermal transfer between the lowerelectrode 204 and the conductor 256, it is preferable that the insulator254 is made of a material whose thermal conductivity is low. As amaterial for the insulator 254, taking into consideration the dielectricconstant and the thermal conductivity, alumina ceramics, bulk yttria,zirconia or the like may be used.

According to the above structure, since the insulator 254 is provided inthe feeder member 250 that supplies the radio frequency power to thelower electrode 204, the heat transfer from the lower electrode 204 tothe conductor 256 at a lower portion of the feeder member 250 can beinterrupted while the radio frequency power of for example 10 MHz orhigher can be transferred efficiently. Thus, danger in a maintenanceoperation, deterioration of operational efficiency, dew formation on asurface of the feeder member 250, or the like can be prevented.

In addition, as shown in FIG. 5, instead of the feeder member 250,another feeder member 260 may be used. The feeder member 260 has fiveelements of conductors 262, 266 and 270 and insulators 264 and 268.

As described above, the feeder member 250 or 260 for transferring theelectric power from the radio frequency power source 214 to the lowerelectrode 204 has the insulator 254 or insulators 264 and 268, whichhave the effect of interrupting the heat transfer. Thus, the radiofrequency power can be transferred efficiently to the lower electrode204, and it can be prevented that the temperature (heat) of the lowerelectrode 204, which also serves as a temperature controller, istransferred to the lower portion of the feeder member 250 or 260. Thus,a process of heating the lower electrode 204 to 60° C. or more to etchpoly-silicon, a process of controlling a low temperature of 0 to −20° C.to etch a silicon oxide film, and other various processes can beconducted safely and efficiently.

Next, a radio frequency feeder rod of the present invention is explainedbased on sectional views shown in FIGS. 6 and 7.

For example, the radio frequency feeder rod of the invention can beapplied to a plasma processing apparatus shown in FIG. 8. That is,instead of the RF feeder rod 22 of FIG. 8, a radio frequency feeder rod320 of the invention can be used. A radio frequency power is suppliedfrom a radio frequency power source to the electrode part 12 via theradio frequency feeder rod 320. For example, as shown in FIG. 6, theradio frequency feeder rod 320 is shielded by a shield pipe 323, from anoutside thereof. The shield pipe 323 has a function of shielding theradio frequency feeder rod 320 from the outside thereof and being atground potential. That is, the shield pipe 323 is a member correspondingto the outside tube 20 of FIG. 8.

The radio frequency feeder rod 320 of the embodiment is formed by aconductive rod having a flow path 320A through which a cooling medium(for example, an air) A flows. In addition, the radio frequency feederrod 320 of the embodiment has an area expanding unit for expanding anarea of absorption of heat by the air A. The area expanding unit of theembodiment is formed in the axial direction as a plurality of finlikeprotrusions 320B that protrude into the flow path 320A. The finlikeprotrusion 320B has a much larger area contacting with the air flowingthrough the flow path 320A (area of absorption of heat) than that of aconventional flow path. Thus, the radio frequency feeder rod 320 can beefficiently cooled from the inside thereof. Thus, overheat of the radiofrequency feeder rod 320 can be prevented. In the embodiment, an outsidesurface of the radio frequency feeder rod 320 is maintained at a circleshape, and the finlike protrusions 320B protrude into the flow path320A.

When the radio frequency feeder rod 320 is manufactured, for example, aflat plate having the finlike protrusions 320B is made from a thickplate by a cutting operation, then the flat plate is rolled into ahollow rod, and then both edges thereof are bonded to each other by awelding or the like.

When the radio frequency power is applied from the radio frequency powersource to the electrode part 12, a radio frequency electric current mayflow along each surface of the radio frequency feeder rod 320. At thattime, the temperature of the radio frequency feeder rod 320 is going torise according to the radio frequency resistance. However, since the airfor cooling flows into the flow path 320A, the temperature rise of theradio frequency feeder rod 320 is inhibited. In particular, since thefinlike protrusions 320B are formed in the flow path 320A of the radiofrequency feeder rod 320, the area of absorption of heat by the air isso large that the radio frequency feeder rod 320 can be efficientlycooled even when the radio frequency power is great. That is, respectiveoverheat can be prevented.

As described above, according to the embodiment, since the finlikeprotrusions 320B that protrude into the flow path 320A of the radiofrequency feeder rod 320 are provided, the area of absorption of heat bythe air can be large. Thus, the cooling efficiency by the air can beremarkably improved, and overheat of the radio frequency feeder rod 320can be prevented. In particular, even when the wafer W is enlarged,density of the plasma process is made higher, and thus the radiofrequency power is increased, overheat of the radio frequency feeder rod320 can be prevented, and the plasma process can be conducted smoothly.

In the above embodiment, the finlike protrusions 320B are explained asan area expanding unit of the present invention. However, it is notlimited to the finlike protrusion 320B, if it protrudes into the flowpath 320A. For example, sticklike (or needlelike) protrusions orpleat-like protrusions may protrude over the whole surface of the flowpath. In addition, as shown in FIG. 7, a plurality of flow paths may beformed in lotus-root-hole shapes and arranged in parallel. Each of theplurality of flow paths may have one or more protrusions. In addition, acooling medium such as an air may be caused to flow between the radiofrequency feeder rod and the shield pipe. The cooling medium is notlimited to the air, but any suitable cooling medium may be selected asrequired. The object to be processed is not limited to the wafer. Theradio frequency feeder rod of the invention can be applied to not onlythe parallel plate plasma processing apparatus but also any other plasmaprocessing apparatus using a radio frequency power. In addition, it canbe also applied to a general feeder rod for a radio frequency power.

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 20. A radiofrequency feeder rod that is used for supplying a radio frequency powerand that has a flow path of cooling-medium therein, the radio frequencyfeeder rod comprising an expanding unit that expands an area ofabsorption of heat by the cooling medium, and a shielding member thatshield the radio frequency feeder rod from an outside thereof.
 21. Aradio frequency feeder rod according to claim 20, further comprising aplurality of flow paths that extend in parallel.
 22. A radio frequencyfeeder rod according to claim 20, wherein the expanding unit comprises aplurality of protrusions that protrude into the flow path ofcooling-medium.
 23. A radio frequency feeder rod according to claim 22,wherein the protrusion is finlike formed in an axial direction. 24.(canceled)